Method for forming low resistance, sub-micrometer semiconductor

Details Method for forming low resistance, sub-micrometer semiconductor Method for forming low resistance, sub-micrometer semiconductor

1984-03-06

1990-07-03

Dees, Jose

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430315, 430316, 430317, 430318, 430324, 430329, 437180, 437203, 437229, G03C 500

Patent

active

049390716

ABSTRACT:
A process for forming a T or Y gate structures on the surface of semiconductor device substrates is disclosed wherein the gate length is extremely small, and low resistance along the gate width using light field photolithographic processing techniques, and a positive photo-resist, which allows definition of areas of smaller dimension than conventional dark field photolithographic techniques.

REFERENCES:
patent: 3761264 (1973-09-01), Sterzer
patent: 3873361 (1975-03-01), Franc et al.
patent: 4088490 (1978-05-01), Duke et al.
patent: 4213840 (1980-07-01), Omori et al.
patent: 4525448 (1985-06-01), Ghosh
patent: 4546066 (1985-10-01), Field et al.
patent: 4621415 (1986-11-01), Tran

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