Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1994-10-17
1997-02-25
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, 20419226, C23C 1434
Patent
active
056056095
ABSTRACT:
The present invention relates to a film comprising silicon dioxide as the main component, which contains Zr, etc., and a method for forming it by reactive DC sputtering. It makes it possible to form reflection preventive films, alkali barrier films and various multi-layered films such as multi-layered films for anti-iridescent glass, which contain said film comprising silicon dioxide as the main component, by a physical vapor deposition method without breaking a vacuum.
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55-110127 Abstract.
62-073202 Abstract.
61-144029 Abstract.
61-145823 Abstract.
Ando Ei'ichi
Ebisawa Junichi
Matsumoto Kiyoshi
Mitsui Akira
Oyama Takuji
Asahi Glass Company Ltd.
Nguyen Nam
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