Method for forming low-k dielectric layer of semiconductor...

Details Method for forming low-k dielectric layer of semiconductor... Method for forming low-k dielectric layer of semiconductor...

2006-01-17

2006-01-17

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S780000, C438S781000, C438S782000, C438S778000, C438S661000, C438S665000

Reexamination Certificate

active

06987070

ABSTRACT:
Disclosed is a method for forming a low-k dielectric layer of a semiconductor device. The method includes a step providing a semiconductor substrate having a predetermined pattern, a step coating porous powders having a micro size on the semiconductor by spraying the porous powders, and a step performing a heat treatment process with respect to a resultant structure, thereby forming the low-k dielectric layer. After micro-sized porous powders are coated on a semiconductor substrate, a heat treatment process is performed, so that powders are bonded to each other, thereby forming a low-k dielectric layer even if the dielectric layer has a dielectric constant equal to or less than 2.8. A signal delay time is reduced by depositing the low-k dielectric layer on the semiconductor substrate.

REFERENCES:
patent: 6790792 (2004-09-01), Shaffer et al.
patent: 2002/0068458 (2002-06-01), Chiang et al.
patent: 2005/0064726 (2005-03-01), Reid et al.
patent: 2005/0106862 (2005-05-01), Maeng

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