Method for forming low dielectric layer of semiconductor device

Details Method for forming low dielectric layer of semiconductor device Method for forming low dielectric layer of semiconductor device

2005-10-18

2005-10-18

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257S642000

Reexamination Certificate

active

06955998

ABSTRACT:
Disclosed is a method for forming a low dielectric layer of a semiconductor device. The method includes the steps of forming a low dielectric polymer layer on a semiconductor substrate and performing an in-situ plasma-assistant surface modification process with respect to the low dielectric polymer layer, thereby forming an adhesion promoter layer on the low dielectric polymer layer. The method prevents a film from being delaminated at an interfacial surface due to film stress or adhesion fault, after processes for forming the low dielectric layer and a low resistance metal wiring have been completed to achieve semiconductor devices operated at a high speed.

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