Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1997-10-10
2000-03-28
Niebling, John F.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438778, 438783, 438784, 438787, 438789, 438790, 438958, 4272552, 427579, H01L 2131, H01L 21469
Patent
active
060431679
ABSTRACT:
The method for forming an insulating film having a low dielectric constant, which is suitable for intermetal insulating film applications, by plasma enhanced chemical vapor deposition (PECVD) includes the step of supplying a first source gas containing fluorine and carbon to a dual-frequency, high density plasma reactor. The method also includes the step of supplying a second source gas containing silicon dioxide to the reactor. In this manner a fluorocarbon/silicon dioxide film is formed on a substrate in the reactor.
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Kazuhiko Endo and Tordu Tatsumi, Fluorinated amorphous carbon thin films by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics, Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan, pps, 1370-1373.
Kim Dong Sun
Lee Young Hie
Park Jin Won
LG Semicon Co. Ltd.
Niebling John F.
Zarneke David A.
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