Method for forming low dielectric constant fluorine-doped...

Details Method for forming low dielectric constant fluorine-doped... Method for forming low dielectric constant fluorine-doped...

2006-05-03

2009-08-25

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S631000, C438S687000, C438S784000, C438S786000, C438S787000, C257SE21273, C257SE21276, C257SE21573, C257SE21576, C257SE21586

Reexamination Certificate

active

07579271

ABSTRACT:
A method for forming a semiconductor device is provided. In one embodiment, the method includes providing a semiconductor substrate with a surface region. The surface region includes one or more layers overlying the semiconductor substrate. In addition, the method includes depositing a dielectric layer overlying the surface region. The dielectric layer is formed by a CVD process. Furthermore, the method includes forming a diffusion barrier layer overlying the dielectric layer. In addition, the method includes forming a conductive layer overlying the diffusion barrier layer. Additionally, the method includes reducing the thickness of the conductive layer using a chemical-mechanical polishing process. The CVD process utilizes fluorine as a reactant to form the dielectric layer. In addition, the dielectric layer is associated with a dielectric constant equal or less than 3.3.

REFERENCES:
patent: 6319858 (2001-11-01), Lee et al.
patent: 2002/0173172 (2002-11-01), Loboda et al.
patent: 2004/0067634 (2004-04-01), Kim et al.
patent: 2005/0098856 (2005-05-01), Aronowitz et al.
patent: 2005/0200021 (2005-09-01), Ito et al.
patent: 2006/0084279 (2006-04-01), Chang et al.
patent: 2006/0276030 (2006-12-01), Wang et al.
patent: 2007/0299239 (2007-12-01), Weigel et al.

Affiliated with

Also associated with

Rating

Method for forming low dielectric constant fluorine-doped... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming low dielectric constant fluorine-doped..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming low dielectric constant fluorine-doped... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4056504