Method for forming local interconnects using selective anisotrop

Details Method for forming local interconnects using selective anisotrop Method for forming local interconnects using selective anisotrop

1989-09-05

1990-09-18

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156662, 1566591, 20419235, B44C 122, C03C 1500, C03C 2506, C23F 102

Patent

active

049575902

ABSTRACT:
A method for etching titanium nitride local interconnects is disclosed. A layer of titaniun nitride is either formed as a by-product of the formation of titanium silicide by direct reaction or by deposition. The location of the interconnects is defined by patterning photoresist at the desired locations. A plasma etch using a chlorine-bearing agent such as CCl.sub.4 as the etchant etches the titanium nitride anisotropically at those locations covered by photoresist, and isotropically elsewhere, so that filaments of the titanium nitride are removed without undercutting the photoresist mask. The etch is selective relative to the underlying material, such as a refractory metal silicide, refractory metals, or silicon, due to the passivation of the underlying material by the carbon atoms of the CCl.sub.4. The selectivity, together with the selective anisotropy, even allows significant overetch of the material to remove the filaments without undercutting the masked interconnect material.

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Donnelly et al., "Anisotropic Etching in Chlorine-Containing Plasmas", Solid-State Techol., vol. 24, No. 4, 1981, pp. 161-166.
Shah, "Refractory Metal Gate Processes for VLSI Applications", IEEE Trans. on Electron Devices, vol. ED-26, No. 4, Apr. 1979, pp. 631-640.

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