Method for forming layer of hemispherical grains and for fabrica

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

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H01L 2120

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059096250

ABSTRACT:
A method for forming a layer of hemispherical silicon grains having a desired density and a desired shape in order to increase the surface area of the storage electrode of a capacitor. The method involves the formation of a thin oxide film over an under silicon layer to be formed with hemispherical silicon grains, so that the formation of those hemispherical silicon grains can be carried out in such a manner that the hemispherical silicon grains have a desired density and a desired shape under given conditions irrespective of whether or not the under silicon layer is doped with impurity ions and of the crystalline structure of the under silicon layer.

REFERENCES:
patent: 5340765 (1994-08-01), Dennison et al.
patent: 5723379 (1998-03-01), Watanabe et al.
patent: 5759262 (1998-06-01), Weimer et al.

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