Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Patent
1997-05-01
1999-11-02
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
438486, H01L 2704
Patent
active
059769599
ABSTRACT:
An inexpensive method for fabricating defect-free, device quality single crystalline silicon layer on an insulator or on a glass substrate has been developed and disclosed herewith. This is accomplished by bonding a single crystalline silicon seed to the insulating substrate, followed by depositing a polysilixon or amorphous silicon layer and zone-melting the seed and the polysilicon junction by an excimer laser. As the excimer laser scans from the molten seed-polysilicon junction to the next adjacent polysilicon, the preceding molten section recrystallized into device quality single crystalline layer, until the entire polysilicon layer transforms into single crystalline film. This invention has particular application in fields of optoelectronics, sensors, high temperature electronics, radiation hard devices, display devices, MOSFET, and FET devices.
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Ackerman Stephen B.
Bowers Charles
Industrial Technology Research Institute
Saile George O.
Sulsky Martin
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