Method for forming landing plug contact in semiconductor device

Details Method for forming landing plug contact in semiconductor device Method for forming landing plug contact in semiconductor device

2005-07-06

2008-09-02

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S597000, C438S706000, C257SE21649

Reexamination Certificate

active

07419896

ABSTRACT:
A method for forming a landing contact plug in a semiconductor device is provided. The method includes the steps of: forming a plurality of gate structures on a substrate, each gate structure including a gate hard mask; forming an inter-layer insulation layer over the gate structures; planarizing the inter-layer insulation layer until the gate hard mask is exposed; forming an etch barrier layer on the inter-layer insulation layer; etching a predetermined portion of the inter-layer insulation layer by using the etch barrier layer as an etch barrier to form a plurality of contact holes; forming a conductive layer until the conductive layer fills the contact holes; removing surface roughness created during the formation of the conductive layer by a first etch-back process; and planarizing the conductive layer by a second etch-back process until the gate hard mask is exposed.

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