Method for forming isolation regions subsequent to gate formatio

Details Method for forming isolation regions subsequent to gate formatio Method for forming isolation regions subsequent to gate formatio

1997-12-23

2000-05-30

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Implanting to form insulator

438528, H01L 2176

Patent

active

060690542

ABSTRACT:
Semiconductor devices are formed in a semiconductor substrate having an essentially planar upper surface. In some embodiments, implanted regions are formed in the substrate at a first predetermined depth by implantation of oxygen and/or nitrogen ions. In some embodiments buried implanted are formed in the substrate at a second predetermined depth, deeper than the first depth by implantation of oxygen and/or nitrogen ions. These implanted regions are converted to dielectric isolation regions and buried dielectric regions, respectively, by a high temperature anneal after formation of a gate structure.

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