Method for forming isolation regions in a semiconductor memory d

Details Method for forming isolation regions in a semiconductor memory d Method for forming isolation regions in a semiconductor memory d

1992-03-04

1994-12-13

Fourson, George

Fishing, trapping, and vermin destroying

437 72, 437 35, H01L 2176

Patent

active

053729501

ABSTRACT:
A method for forming an isolation region within a semiconductor device is disclosed. A trench is first formed in a predefined isolation region of a semiconductor substrate. An oxidation blocking material is injected into the inside walls of the trench before growing a field oxide film inside the trench. Accordingly, the present invention can simplify the fabrication of isolation regions within a semiconductor device by directly implanting the oxidation blocking material at a predetermined angle into the inside walls of the trench which constitutes the isolation region. In the present invention, unlike conventional fabrication processes using spacers to prevent penetration of a field oxide film into the surface of semiconductor non-isolation regions, the need for spacers is obviated.

REFERENCES:
patent: 4918027 (1990-04-01), Fuse et al.
patent: 4923563 (1990-05-01), Lee
patent: 5047359 (1991-09-01), Nagatomo
patent: 5229318 (1993-07-01), Straboni et al.

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