Method for forming isolation layer in semiconductor device

Details Method for forming isolation layer in semiconductor device Method for forming isolation layer in semiconductor device

2007-04-17

2007-04-17

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S702000, C257SE21540

Reexamination Certificate

active

10880278

ABSTRACT:
The present invention relates to a method for forming an insulating layer in a semiconductor device. After a first oxide film is formed in a trench, an impurity remaining on the first oxide film in the process of etching the first oxide film using a gas containing fluorine is stripped using oxygen plasma or hydrogen plasma. Thus, it can prevent degradation of device properties due to diffusion of the impurity without additional equipment. Therefore, it can help improve reliability of a next-generation device.

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