Method for forming isolation layer in semiconductor device

Details Method for forming isolation layer in semiconductor device Method for forming isolation layer in semiconductor device

1997-07-11

1999-09-21

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

H01L 2176

Patent

active

059565993

ABSTRACT:
The method for forming a semiconductor device isolation layer, which advantageously simplifies the manufacture and planarization of the device, includes the steps of forming a V-shaped groove of a predetermined width and depth in a device isolation region of a semiconductor substrate and subjecting the substrate to a thermal oxidation process to form the device isolation layer.

REFERENCES:
patent: 3961999 (1976-06-01), Antipov
patent: 4278705 (1981-07-01), Agraz-Guerena
patent: 5234845 (1993-08-01), Aoki et al.

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