Method for forming isolation film in semiconductor device

Details Method for forming isolation film in semiconductor device Method for forming isolation film in semiconductor device

2007-02-27

2007-02-27

Doan, Theresa T. (Department: 2814)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S443000

Reexamination Certificate

active

11020330

ABSTRACT:
A method for forming an isolation film of a semiconductor device is disclosed which includes forming trenches in a semiconductor substrate, forming a first HDP oxide film in the formed trenches, performing an etch-back process using a mixing gas of C2F6gas and O2gas to form vertical walls in the first HDP oxide films and forming a second HDP oxide film on the resulting structure. The characteristics of a device can be improved because diffusion of F ions in a FSG film formed on the first HDP oxide film is minimized.

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patent: 2001-332510 (2001-11-01), None
patent: 10-2002-0092682 (2002-12-01), None
patent: 10-2004-0008727 (2004-01-01), None

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