Method for forming isolating layer in semiconductor device

Details Method for forming isolating layer in semiconductor device Method for forming isolating layer in semiconductor device

1997-01-17

1999-03-02

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438225, 438297, 438456, H01L 2176

Patent

active

058770682

ABSTRACT:
A method for forming an isolating layer in a semiconductor device includes the steps of forming a first material layer on an active layer having a major axis and a minor axis, forming a second material layer in a form of sidewall at sides of the first material layer in a direction of the major axis, and conducting field oxidation using the first and second material layers as masks to form the isolating layer.

REFERENCES:
patent: 5612247 (1995-07-01), Itabashi
patent: 5700733 (1975-06-01), Manning
Stanley Wolf, Ph.D., Silicon Processing for The VLSI Era, vol. 2, Process Integration, pp. 35-38, 1989.
POP-SILO, Ext.Abs Spring Meeting-Electrochem, Soc. 1988, p. 205.

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