Method for forming intermetal dielectric with SOG etchback and C

Details Method for forming intermetal dielectric with SOG etchback and C Method for forming intermetal dielectric with SOG etchback and C

1996-03-15

1997-12-30

Fourson, George R.

Fishing, trapping, and vermin destroying

437195, 437231, 437238, H01L 2128

Patent

active

057029806

ABSTRACT:
A defect free intermetal dielectric, IMD, and method of forming the defect free IMD are described. The IMD uses spacers formed by means of etchback of a layer of spin-on-glass, SOG. In order to use an oxide layer formed by means of plasma enhanced tetra-ethyl-ortho-silicate, PE-TEOS, as part of the IMD an oxide cap layer formed using plasma enhanced chemical vapor deposition, PE-CVD, is used to isolate the SOG spacers from the PE-TEOS formed oxide layer. By isolating the PE-TEOS formed oxide layer from the SOG spacers a reliable and defect free IMD is achieved.

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patent: 5552344 (1996-09-01), Jang et al.
S. Wolf "Silicon Processing for the VLSI Era, vol. 1", Lattice Press, p. 183, 1986.

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