Method for forming intermetal dielectric with SOG etchback and C

Details Method for forming intermetal dielectric with SOG etchback and C Method for forming intermetal dielectric with SOG etchback and C

1997-07-14

1999-09-21

Everhart, Caridad

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257760, H01L 21441

Patent

active

059557877

ABSTRACT:
A defect free intermetal dielectric, IMD, and method of forming the defect free IMD are described. The IMD uses spacers formed by means of etchback of a layer of spin-on-glass, SOG. In order to use an oxide layer formed by means of plasma enhanced tetra-ethyl-ortho-silicate, PE-TEOS, as part of the IMD an oxide cap layer formed using plasma enhanced chemical vapor deposition, PE-CVD, is used to isolate the SOG spacers from the PE-TEOS formed oxide layer. By isolating the PE-TEOS formed oxide layer from the SOG spacers a reliable and defect free IMD is achieved.

REFERENCES:
patent: 5252515 (1993-10-01), Tsai et al.
patent: 5312512 (1994-05-01), Allman et al.
patent: 5482900 (1996-01-01), Yang
patent: 5516729 (1996-05-01), Dawson et al.
patent: 5702980 (1997-12-01), Yu et al.

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