Method for forming interlayer insulating film of semiconductor d

Details Method for forming interlayer insulating film of semiconductor d Method for forming interlayer insulating film of semiconductor d

1997-06-26

1999-03-30

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438783, 438760, 438933, H01L 2102

Patent

active

058889108

ABSTRACT:
A method for forming an interlayer insulating film, which involves a first oxide film deposition, a GeBPSG film deposition, a thermal treatment and a second oxide film deposition all being carried out in a continuous manner in an LPCVD device. In accordance with this method, it is possible to form an interlayer insulating film having a superior planarization characteristic in a single pass. The deposition and thermal treatment of the interlayer insulating film are carried out in a continuous manner in a single processing device. Accordingly, it is possible to effectively suppress the degradation of the GeBPSG film caused by a moisture absorption. Since a protective oxide film is deposited over the GeBPSG film in a continuous manner after the thermal treatment of the GeBPSG film, the degradation of the GeBPSG film caused by the moisture absorption can be affectively suppressed.

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patent: 5604156 (1997-02-01), Chung et al.
patent: 5646075 (1997-07-01), Thakur et al.
patent: 5648175 (1997-07-01), Russell et al.

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