Method for forming interlayer insulating film in...

Details Method for forming interlayer insulating film in... Method for forming interlayer insulating film in...

2008-08-25

2011-11-01

Loke, Steven (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S725000

Reexamination Certificate

active

08048802

ABSTRACT:
A method for forming an interlayer insulating film includes providing a semiconductor substrate having a first substrate region with a plurality of metal wiring and a second substrate region having no metal wiring, and then forming an insulating film dummy pattern in the second substrate region, wherein the insulating film dummy pattern has the same thickness as the metal wiring, and then forming an interlayer insulating film over the semiconductor substrate including the insulating film dummy pattern.

REFERENCES:
patent: 5196089 (1993-03-01), Takada et al.
patent: 6487712 (2002-11-01), Kim
patent: 2003/0129548 (2003-07-01), Kido
patent: 10-144690 (1998-05-01), None
patent: 2000-082706 (2000-03-01), None

Affiliated with

Also associated with

Rating

Method for forming interlayer insulating film in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming interlayer insulating film in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming interlayer insulating film in... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4284387