Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-05-27
2008-12-09
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S787000, C438S788000, C438S475000, C438S485000, C438S508000
Reexamination Certificate
active
07462568
ABSTRACT:
Disclosed herein is a method for forming an interlayer dielectric film in a semiconductor device. The method comprises the steps of preparing a semiconductor substrate having a dielectric film and conductive film patterns sequentially deposited thereon, and depositing a high plasma oxide film as the interlayer dielectric film on the conductive film patterns and the dielectric films by supplying H2as an adding gas together with a source gas. A dangling bond in an interface of the semiconductor substrate is reduced by adding hydrogen into the dielectric film, thereby enhancing the uniformity of the deposition. Moreover, hydrogen in the dielectric film decreases current leakage occurring in the gate by preventing electrons in the plasma from flowing into a gate through the bit-line, thereby enhancing the refresh characteristics of the semiconductor device.
REFERENCES:
patent: 5792702 (1998-08-01), Liang
patent: 6297114 (2001-10-01), Iwata et al.
patent: 6509280 (2003-01-01), Choi
patent: 2002/0039814 (2002-04-01), Jada et al.
patent: 2003/0096504 (2003-05-01), Ryu et al.
Cellere et al., “Different Nature of Process-Induced and Stress-Induced Defects in Thin SiO2Layers,” IEEE Electron Device Letters, 24:393-395 (2003).
Dang Phuc T
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Tran Thanh Y
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