Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-23
2011-08-23
Quach, Tuan N. (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S667000, C438S678000, C257SE21586
Reexamination Certificate
active
08003517
ABSTRACT:
A method for forming an interconnect, comprising (a) providing a substrate (203) with a via (205) defined therein; (b) forming a seed layer (211) such that a first portion of the seed layer extends over a surface of the via, and a second portion of the seed layer extends over a portion of the substrate; (c) removing the second portion of the seed layer; and (d) depositing a metal (215) over the first portion of the seed layer by an electroless process.
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Acosta Eddie
Chatterjee Ritwik
Garcia Sam S.
Mathew Varughese
Fortkort John A.
Fortkort & Houston P.C.
Freescale Semiconductor Inc.
Quach Tuan N.
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