Method for forming inter-metal dielectrics in a semiconductor de

Details Method for forming inter-metal dielectrics in a semiconductor de Method for forming inter-metal dielectrics in a semiconductor de

1992-10-02

1994-10-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437228, 437231, 437235, 437238, H01L 2144, H01L 2148

Patent

active

053526309

ABSTRACT:
A method for forming an inter-metal dielectrics in a semiconductor device includes the steps of sequentially forming a first and second insulating layers over a semiconductor substrate with a patterned metal layers, etching-back the second insulating layer so as to form second insulating spacers over the side walls of the first insulating layer, and growing a third insulating layer over the first and second insulating layers, the growing speed of the third insulating layer being different from the region over the first insulating layer to the region over the second insulating layer.

REFERENCES:
patent: 4474831 (1984-10-01), Downey
patent: 4535528 (1985-08-01), Chen et al.
patent: 4839311 (1989-06-01), Riley et al.
patent: 4986878 (1991-01-01), Malazgirt et al.
patent: 5051380 (1991-09-01), Maeda
patent: 5160986 (1992-11-01), Bellezza

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