Method for forming integrated circuit devices using a phase shif

Details Method for forming integrated circuit devices using a phase shif Method for forming integrated circuit devices using a phase shif

1992-07-02

1994-03-08

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430 5, 430311, G03F 700

Patent

active

052926230

ABSTRACT:
Integrated circuits with small feature sizes are obtained using a phase shifting mask which has reduced back reflection and improved optical contrast. These improvements result from reduced etching of the chrome and chrome oxide layers on the phase shifting mask. In one embodiment, the phase shifting mask is formed by depositing an image reversible photoresist layer (22) which overlies the optical mask (18). Forming a first exposed region (24) and an unexposed region (26) in the image reversible photoresist layer (22). Treating the first exposed region (24) to form a hardened first exposed region. Forming a second exposed region (30) within the remaining portion of the unexposed region (26) by exposing the back surface (16) of the substrate (12) to an optical illumination source. Removing the second exposed region (30) to uncover a portion (32) of the substrate (12) and to form an etch mask (34). The uncovered portion (32) of the substrate (12) is etched to form a trench region (38).

REFERENCES:
patent: 4568631 (1986-02-01), Badami
patent: 4885231 (1989-12-01), Chan
patent: 5045417 (1991-09-01), Okamoto
patent: 5153083 (1992-10-01), Garofalo
"Improving Resolution in Photolithography with a Phase-Shifting Mask," by Levenson et al., IEEE Transactions on Electron Devices, vol. ED29, No. 12, Dec., 1982, pp. 1828-1836.

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