Method for forming insulating layers between polysilicon layers

Details Method for forming insulating layers between polysilicon layers Method for forming insulating layers between polysilicon layers

1995-09-28

1999-02-09

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438790, 438909, H01L 2131, H01L 21316

Patent

active

058694064

ABSTRACT:
A method of fabricating an integrated circuit device with a substantially uniform inter-layer dielectric layer. The method includes steps of providing a partially completed semiconductor wafer (400) where the partially completed semiconductor device has a first polysilicon layer (401) thereon. The method includes depositing a dielectric layer (405) overlying the polysilicon layer and portions of the partially completed semiconductor device at a pressure of about 1 atmosphere. A step of forming a second polysilicon layer overlying portions of the dielectric layer is also included. The dielectric layer depositing step includes combining an organic silane and an ozone at a concentration of 200 g/m.sup.3 and less.

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