Method for forming insulating film between metal wirings of semi

Details Method for forming insulating film between metal wirings of semi Method for forming insulating film between metal wirings of semi

1996-06-04

2000-05-09

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438636, 438643, 438653, H01L 21306, H01L 214763

Patent

active

060603828

ABSTRACT:
A method for forming metal wirings, which includes the steps of forming over an insulating film a conduction pattern corresponding to metal wirings, which will be subsequently formed, plasma-treating the surface of the resulting structure, forming an oxide film, which contains Si atoms with a refraction index of 1.47 or above in an excessive amount, using SiH.sub.4 --N.sub.2 O mixed gas, and forming an O.sub.3 -TEOS film over the oxide film. In accordance with this method, it is possible to prevent a formation of voids in the insulating layer and a degradation in the quality of the insulating layer while achieving a superior reproducibility, an improved yield and an improved reliability.

REFERENCES:
patent: 5089442 (1992-02-01), Olmer
patent: 5403780 (1995-04-01), Jain et al.
patent: 5444023 (1995-08-01), Homma
patent: 5643834 (1997-07-01), Harada et al.

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