Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1996-02-07
2000-03-14
Bowers, Charles
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
H01L 2131
Patent
active
060372745
ABSTRACT:
The present invention relates to a method for forming an insulating film with a low relative dielectric constant. A method for forming an insulating film in terms of a plasma chemical vapor deposition, characterized in that a Si supply gas, an oxygen supply gas, and a fluorine supply gas are used a material gas to form said insulating film, and said insulating film is formed under a film forming condition that a density of said insulating film to be formed is equal to or more than 2.25 g/cm.sup.3.
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Kudo Hiroshi
Shinohara Rika
Bowers Charles
Fujitsu Limited
Thompson Craig
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