Method for forming inside nitride spacer for deep trench...

Details Method for forming inside nitride spacer for deep trench... Method for forming inside nitride spacer for deep trench...

2005-10-04

2005-10-04

Utech, Benjamin L. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S713000, C438S719000, C438S723000, C438S724000

Reexamination Certificate

active

06951822

ABSTRACT:
A method is provided for forming an inside nitride spacer in a deep trench device DRAM cell. The method includes etching a stud from a semiconductor material including a first spacer positioned on the sidewalls of the deep trench, wherein two of the sidewalls are formed of isolation trench oxide. The method further includes depositing an oxide layer on the surface of the semiconductor, and depositing a second spacer in the deep trench of the semiconductor, wherein the second spacer has a positive taper relative to the isolation trench oxide.

REFERENCES:
patent: 5605603 (1997-02-01), Grimard et al.
patent: 6008104 (1999-12-01), Schrems
patent: 6339241 (2002-01-01), Mandelman et al.

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