Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-04-29
1999-12-07
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438525, 438649, 438683, H01L 21265, H01L 2128
Patent
active
059982942
ABSTRACT:
A method is provided for improving silicide formation, and the electrical ntact provided thereby, on non-planar silicon structures. In this method, a semiconductor device structure is initially formed having non-planar surface regions. A metal layer is deposited on the non-planar surfaces. The metal deposition process step is followed by an off-axis implantation of non-dopant ions, causing a mixing of the metal and silicon atoms at the metal and non-planar silicon structure interface. The off-axes implantation also serves to disrupt the native silicon dioxide layer between the silicon and metal layers regions. Thermal processing is then used to form silicide on the non-planar surfaces of the semiconductor silicon structure.
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Clayton Stanley R.
Csanadi Oswald I.
Kasa Shannon D.
Russell Stephen D.
Young Charles A.
Fendelman Harvey
Kagan Michael A.
Lipovsky Peter A.
Quach T. N.
The United States of America as represented by the Secretary of
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