Method for forming IMD films

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S784000, C438S786000, C427S249150

Reexamination Certificate

active

10937215

ABSTRACT:
A method for forming IMD films. A substrate is provided. A plurality of dielectric films are formed on the substrate, wherein each of the dielectric layers are deposited in-situ in one chamber with only one thermal cycle.

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patent: 2004/0150110 (2004-08-01), Usami et al.

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