Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1998-09-25
2000-03-28
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438255, 438725, H01L 2120
Patent
active
060431326
ABSTRACT:
Methods of forming a uniform HSG silicon film on a conductive layer pattern use C.sub.x F.sub.y and HF to remove the polymer by-products resulted etching, ashing and stripping steps. This effective removal promotes the formation of uniform HSG silicon film the conductive layer pattern. Accordingly, when the conductive layer pattern is used as the storage node of a capacitor, the capacitance of the capacitor increases, and the difference in the capacitance between capacitors minimizes, resulting in stabilized operation characteristics of the semiconductor device.
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Millers David T.
Nguyen Tuan H.
Samsung Electronics Co,. Ltd.
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