Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-12-20
2009-02-24
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S641000, C257SE21575
Reexamination Certificate
active
07494926
ABSTRACT:
Disclosed herein is a method for forming a highly conductive metal pattern which comprises forming a metal pattern on a substrate by the use of a photocatalyst and a selective electroless or electroplating process, and transferring the metal pattern to a flexible plastic substrate. According to the method, a highly conductive metal pattern can be effectively formed on a flexible plastic substrate within a short time, compared to conventional formation methods. Further disclosed is an EMI filter comprising a metal pattern formed by the method. The EMI filter not only exhibits high performances, but also is advantageous in terms of low manufacturing costs and simple manufacturing process. Accordingly, the EMI filter can be applied to a variety of flat panel display devices, including PDPs and organic ELs.
REFERENCES:
patent: 5576073 (1996-11-01), Kickelhain
patent: 5908497 (1999-06-01), Morfesis et al.
patent: 6066359 (2000-05-01), Yao et al.
patent: 6500589 (2002-12-01), Ohtsu et al.
patent: 7067237 (2006-06-01), Kim et al.
patent: 7205096 (2007-04-01), Park et al.
patent: 7205098 (2007-04-01), Cho et al.
patent: 7338752 (2008-03-01), No et al.
patent: 2004/0079941 (2004-04-01), Yamazaki et al.
patent: 2005/0003242 (2005-01-01), No et al.
patent: 2005/0023957 (2005-02-01), Kim et al.
patent: 2006/0019182 (2006-01-01), Lee et al.
patent: 2006/0037177 (2006-02-01), Blum et al.
patent: 2006/0105251 (2006-05-01), Hwang et al.
patent: 2006/0127818 (2006-06-01), Cho et al.
patent: 2006/0144713 (2006-07-01), Song et al.
patent: 2006/0183061 (2006-08-01), Hwang et al.
patent: 2007/0027015 (2007-02-01), Zhou et al.
patent: 2007/0181878 (2007-08-01), Song et al.
patent: 2008/0044559 (2008-02-01), Noh et al.
patent: 19910482 (2000-05-01), None
patent: 2001291721 (2001-10-01), None
patent: 5-16281 (1993-01-01), None
patent: 10-72676 (1998-03-01), None
patent: 10-278800 (1998-10-01), None
patent: 2000-323890 (2000-11-01), None
patent: 2001-168574 (2001-06-01), None
patent: 10-2003-0030110 (2003-04-01), None
Cho Sung Hen
Hwang Euk Che
Kim Jin Young
Noh Chang Ho
Song Ki Yong
Buchanan & Ingersoll & Rooney PC
Estrada Michelle
Samsung Corning Co., Ltd.
Stark Jarrett J
LandOfFree
Method for forming highly conductive metal pattern on... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming highly conductive metal pattern on..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming highly conductive metal pattern on... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4122657