Method for forming high-resolution pattern and substrate...

Details Method for forming high-resolution pattern and substrate... Method for forming high-resolution pattern and substrate...

2006-05-11

2008-12-09

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S795000, C257SE21024

Reexamination Certificate

active

07462570

ABSTRACT:
A patterning method comprising (a) providing a substrate having a sacrificial layer made of a first material, partially or totally formed on the substrate; (b) forming pattern grooves, which are free from the first material and have a line width of a first resolution or lower, on the sacrificial layer by using a first means; (c) filling the pattern grooves with a second material by using a second means; and (d) removing the first material present in a remaining sacrificial layer by way of irradiation or heating, wherein the first material has a threshold fluence of less than a threshold fluence of the second material, the first material is removed in step (d) under a dose ranging from the threshold fluence of the first material to that of the second material, and the pattern is formed on the substrate by the second material.

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