Method for forming high performance thin film transistor structu

Details Method for forming high performance thin film transistor structu Method for forming high performance thin film transistor structu

1996-07-17

1998-11-10

Prenty, Mark V.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

257 59, H01L 2904

Patent

active

058343440

ABSTRACT:
A high performance thin film transistor structure which includes a pixel electrode layer formed after a passivation step such that electrical connections can be made to a source electrode and to overlap a channel length of the transistor. As a result, the effective channel length can be reduced and the occurrence of short-circuiting is also minimized in densely packed devices. The pixel electrode can be formed of a non-transparent metallic material to serve as a light shield such that the thin film transistor can be most suitably used in a liquid crystal display device.

REFERENCES:
patent: 5229644 (1993-07-01), Wakai et al.
patent: 5371398 (1994-12-01), Nishihara
patent: 5552630 (1996-09-01), Miyake

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