Method for forming high density patterns

Details Method for forming high density patterns Method for forming high density patterns

2007-12-06

2010-02-09

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C257SE21626, C257SE21627, C257SE21640

Reexamination Certificate

active

07659208

ABSTRACT:
Methods are disclosed, such as those involving increasing the density of isolated features in an integrated circuit. In one or more embodiments, a method is provided for forming an integrated circuit with a pattern of isolated features having a final density of isolated features that is greater than a starting density of isolated features in the integrated circuit by a multiple of two or more. The method can include forming a pattern of pillars having a density X, and forming a pattern of holes amongst the pillars, the holes having a density at least X. The pillars can be selectively removed to form a pattern of holes having a density at least 2X. In some embodiments, plugs can be formed in the pattern of holes, such as by epitaxial deposition on the substrate, in order to provide a pattern of pillars having a density 2X. In other embodiments, the pattern of holes can be transferred to the substrate by etching.

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