Method for forming high capacitance memory cells

Details Method for forming high capacitance memory cells Method for forming high capacitance memory cells

1998-05-29

1999-11-09

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438243, 438398, H01L 2120

Patent

active

059813504

ABSTRACT:
A method and structure for high capacitance memory cells is provided. The method includes forming a trench capacitor in a semiconductor substrate. A self-structured mask is formed on the interior surface of the trench. The interior surface of the trench is etched to form an array of silicon pillars. The self-structured mask is removed. Then an insulator layer is formed on the array of silicon pillars. A polycrystalline semiconductor plate extends outwardly from the insulator layer in the trench.

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Abstract of Japanese Patent Application No. JP 363066963, published Mar. 25, 1988, from JPO & JAPIO, (1998).

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