Method for forming gate oxide in semiconductor device

Details Method for forming gate oxide in semiconductor device Method for forming gate oxide in semiconductor device

2005-10-11

2005-10-11

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S659000, C438S775000

Reexamination Certificate

active

06953747

ABSTRACT:
The present invention provides a method for forming a gate oxide film of a semiconductor device including the steps of; forming a gate oxide film and a polysilicon film sequentially on a semiconductor substrate; performing a nitrogen ion implantation process after the formation of the gate oxide film and the polysilicon film; performing a thermal treatment process to form barrier layers by combination of oxides and nitrogen at an interface between the semiconductor substrate and the gate oxide film, and at an interface between the gate oxide film and the polysilicon film; and forming a nitride on the polysilicon film.

REFERENCES:
patent: 5851893 (1998-12-01), Gardner et al.
patent: 6242348 (2001-06-01), Kamal et al.
patent: 6287897 (2001-09-01), Gousev et al.
patent: 6450116 (2002-09-01), Noble et al.
patent: 6541395 (2003-04-01), Trivedi et al.
patent: 6562730 (2003-05-01), Jeng

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