Method for forming gate electrode of semiconductor device

Details Method for forming gate electrode of semiconductor device Method for forming gate electrode of semiconductor device

2008-05-20

2009-11-03

Quach, Tuan N. (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S532000, C438S705000, C257SE21177

Reexamination Certificate

active

07611978

ABSTRACT:
Provided is a method for forming a gate electrode of a semiconductor device which can form a gate electrode having a fine line width. Disclosed method steps include forming a gate oxide film, a polysilicon film for a gate electrode, and a first sacrificial layer on the entire surface of a semiconductor substrate and then forming an opening within the first sacrificial layer. The effective width of the hole is reduced, and an ion implantation layer is formed on the top surface of the polysilicon film in the region exposed through the hole. A gate electrode is formed under the ion implantation layer by using the ion implantation layer as a mask.

REFERENCES:
patent: 4438556 (1984-03-01), Komatsu et al.
patent: 4601778 (1986-07-01), Robb
patent: 5236547 (1993-08-01), Takahashi et al.
patent: 5817558 (1998-10-01), Wu
patent: 6599840 (2003-07-01), Wu et al.
patent: 7192837 (2007-03-01), Koh
patent: 1997-0030497 (1997-06-01), None

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