Method for forming gate electrode of semiconductor device

Details Method for forming gate electrode of semiconductor device Method for forming gate electrode of semiconductor device

2005-01-11

2005-01-11

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S587000, C438S592000, C438S595000

Reexamination Certificate

active

06841461

ABSTRACT:
Disclosed is a method for a gate electrode of a semiconductor device, which forms a re-oxidation film of a sufficient thickness by a low temperature re-oxidation process. Gate oxide film, doped-silicon film, tungsten nitride film, tungsten film, and hard mask film are sequentially formed on semiconductor substrate. Hard mask film is patterned. Tungsten film and tungsten nitride film are etched using patterned hard mask film as an etching barrier in order to expose doped-silicon film. Predetermined oxidation-accelerating ions are implanted into a portion and a side of exposed doped-silicon film. A portion of exposed doped-silicon film is etched. Substrate resulting object is re-oxidized to form a re-oxidation film at a side of etched doped-silicon film.

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