Method for forming fuse in semiconductor device

Details Method for forming fuse in semiconductor device Method for forming fuse in semiconductor device

2005-05-24

2005-05-24

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S132000

Reexamination Certificate

active

06897136

ABSTRACT:
A method for forming a fuse in a semiconductor device comprising: forming a second insulating layer on a first insulating layer; etching the second insulating layer to form a trench; depositing a first metal layer on the trench and the second insulating layer; performing a chemical-mechanical polishing (CMP) process on the first metal layer to form the first metal wiring; forming a third insulating layer on the first metal wiring and the second insulating layer; etching the third insulating layer to form a second trench; depositing a barrier layer and a second metal layer on the second trench and the third insulating layer, and performing a CMP process on the barrier layer and the third insulating layer to form the second metal wiring; depositing a buffer layer on the second metal wiring and the third insulating layer; forming a passivation layer on the buffer layer; and etching the passivation layer.

REFERENCES:
patent: 5565374 (1996-10-01), Fukusho
patent: 6180503 (2001-01-01), Tzeng et al.
patent: 6184121 (2001-02-01), Buchwalter et al.
patent: 6249038 (2001-06-01), Daubenspeck et al.
patent: 6261873 (2001-07-01), Bouldin et al.

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