Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-03-16
2010-02-09
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S682000, C438S592000, C438S655000
Reexamination Certificate
active
07659189
ABSTRACT:
A semiconductor MOS device includes a semiconductor substrate; a gate oxide layer disposed on the semiconductor substrate; a fully silicided gate electrode disposed on the gate oxide layer; a composite thin film interposed between the fully silicided gate electrode and the gate oxide layer; a spacer on sidewall of the fully silicided gate electrode; and a source/drain region implanted into the semiconductor substrate next to the spacer. A method for forming the semiconductor MOS device is disclosed.
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patent: 2005/0282329 (2005-12-01), Li
patent: 2006/0011996 (2006-01-01), Wu et al.
patent: 2006/0228885 (2006-10-01), Saito
Cheng Li-Wei
Hsu Che-Hua
Huang Yao-Tsung
Lin Chien-Ting
Ma Guang-Hwa
Hsu Winston
Luu Chuong A.
United Microelectronics Corp.
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