Method for forming flowable dielectric layer in...

Details Method for forming flowable dielectric layer in... Method for forming flowable dielectric layer in...

2006-08-08

2006-08-08

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S778000

Reexamination Certificate

active

07087515

ABSTRACT:
A method for forming a flowable dielectric layer using a barrier layer on sidewalls of patterned flowable dielectrics, thereby preventing a bridge phenomenon between adjacent contact plugs. The method includes steps of: forming patterns on a semiconductor substrate, wherein narrow and deep gaps are formed therebetween; forming a flowable dielectric layer so as to fill the gaps between the patterns; carrying out an annealing process for densifying the flowable dielectric layer and removing moisture therein; forming contact holes by selectively etching the flowable dielectric layer so as to expose predetermined portions of the semiconductor substrate; forming a barrier layer on sidewalls of the contact holes for preventing micro-pores in the flowable dielectric layer; carrying out a cleaning process in order to remove native oxides and defects on the semiconductor substrate; and forming contact plugs by filling a conductive material into the contact plugs.

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patent: 1020030059445 (2003-07-01), None

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