Method for forming fine patterns of semiconductor device

Details Method for forming fine patterns of semiconductor device Method for forming fine patterns of semiconductor device

2008-05-06

2008-05-06

Huff, Mark F. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S312000, C430S314000, C430S394000

Reexamination Certificate

active

07368226

ABSTRACT:
A method for forming fine patterns of a semiconductor device is provided, the method including forming a first lower layer pattern having a width of two minimum line width and a space pattern on a semiconductor substrate prior to a C-HALO implant process and etching the first lower layer pattern to separate into a second lower layer pattern having a width of two minimum line widths and a space pattern.

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