Method for forming fine patterns of semiconductor device

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Post imaging radiant energy exposure

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430313, 430325, 134 33, 134902, G03F 740

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active

058436278

ABSTRACT:
There is provided a method for forming fine patterns in a semiconductor device without the falling down of the patterns, comprising the steps of: coating a photosensitive film on a wafer; patterning the photosensitive film by use of a light mask, followed by development, to form photosensitive film patterns; scattering a first washing solution on the wafer with spinning, to lie the first washing solution on the wafer including the photosensitive film patterns; scattering a second washing solution on the wafer to lie it thereon while spinning the wafer to remove the first washing solution out of the wafer; and spinning the wafer to dry the second washing solution.

REFERENCES:
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patent: 5252430 (1993-10-01), Hashimoto et al.
patent: 5340702 (1994-08-01), Hirasawa et al.
patent: 5476753 (1995-12-01), Hashimoto et al.
patent: 5660642 (1997-08-01), Britten
patent: 5667922 (1997-09-01), Martiska

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