Method for forming fine patterns of semiconductor device

Details Method for forming fine patterns of semiconductor device Method for forming fine patterns of semiconductor device

1996-06-20

1999-05-04

Baxter, Janet

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430 5, G03C 500

Patent

active

059003499

ABSTRACT:
There is disclosed a method for forming fine patterns in a semiconductor device, comprising the steps of: providing a silicon substrate; coating a pattern material on the surface of the silicon substrate to form a layout of pattern; additionally arranging a plurality of dummy patterns, each having a smaller size than the minimum size at which patterning is not permitting, on the surface of the silicon substrate including the area of said layout; preparing a reticle by use of the layout where said fine dummy patterns are arranged; and exposing the layout on the silicon substrate through said reticle to light, which enables the patterns to have as accurate a width as desired, irrespective of the pattern density, whereby the production yield of the semiconductor device can be greatly improved.

REFERENCES:
patent: 5008553 (1991-04-01), Abe
patent: 5057462 (1991-10-01), Eisenberg et al.
patent: 5214291 (1993-05-01), Hirai et al.
patent: 5597668 (1997-01-01), Nowak et al.

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