Method for forming fine pattern of semiconductor device

Details Method for forming fine pattern of semiconductor device Method for forming fine pattern of semiconductor device

2008-05-06

2010-12-28

Quach, Tuan N. (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S669000, C438S738000, C257SE21582

Reexamination Certificate

active

07858516

ABSTRACT:
A method for forming a fine pattern of a semiconductor device which includes sequentially forming a non-etching layer and a sacrificial layer on a semiconductor substrate; and then forming a plurality of photo-resist layer patterns having a plurality of openings exposing the sacrificial layer; and then forming a plurality of first pattern grooves in the sacrificial layer etching the exposed sacrificial layer using the photo-resist patterns as an etching barrier; removing the photo-resist layer; and then forming an oxidation layer having a plurality of second pattern grooves on the sacrificial layer and in the first pattern grooves by performing a thermal oxidation process on the sacrificial layer; and then forming a plurality of first through-holes exposing the non-etching layer by completely removing the sacrificial layer remaining in oxidation layer; and then forming a plurality of patterns in the non-etching layer by etching the exposed portions of the non-etching layer using the oxidation layer as an etching barrier.

REFERENCES:
patent: 7368385 (2008-05-01), Nolscher et al.
patent: 2002/0043690 (2002-04-01), Doyle et al.

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