Method for forming fine pattern of semiconductor device

Details Method for forming fine pattern of semiconductor device Method for forming fine pattern of semiconductor device

2007-11-30

2009-08-18

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S695000, C257SE21023, C216S047000

Reexamination Certificate

active

07576009

ABSTRACT:
A method for forming a fine pattern of a semiconductor device comprises forming a deposition pattern including first, second, and third mask patterns over a semiconductor substrate having an underlying layer, side-etching the second mask pattern with the third mask pattern as an etching barrier mask, removing the third mask pattern, forming a spin-on-carbon layer that exposes the upper portion of the second mask pattern, performing an etching process to expose the underlying layer with the spin-on-carbon layer as an etching barrier mask, and removing the spin-on-carbon layer.

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Notice of Allowance in counterpart Korean Patent Application No. 2007-0054974, dated Nov. 18, 2008.

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