Method for forming fine pattern of semiconductor device

Details Method for forming fine pattern of semiconductor device Method for forming fine pattern of semiconductor device

2011-08-02

2011-08-02

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S316000

Reexamination Certificate

active

07989145

ABSTRACT:
A method for forming a fine pattern of a semiconductor device comprises forming a spin-on-carbon layer over an underlying layer, forming an anti-reflection pattern including a silicon containing polymer with a first etching mask pattern, forming a photoresist pattern including a silicon containing polymer with a second etching mask pattern between elements of the first etching mask pattern, and etching the spin-on-carbon layer with the etching mask patterns to reduce the process steps and the manufacturing cost, thereby obtaining a uniform pattern profile.

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English-language translation of Chinese Office Action for Application No. 200810000431.2, issued Sep. 25, 2009.

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