Method for forming fine pattern of semiconductor device

Details Method for forming fine pattern of semiconductor device Method for forming fine pattern of semiconductor device

2011-07-05

2011-07-05

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S394000

Reexamination Certificate

active

07972766

ABSTRACT:
A method for forming a fine pattern of a semiconductor device comprises: forming anti-reflection coating patterns over an underlying layer of a semiconductor substrate using an anti-reflection coating composition comprising a silicon-containing polymer; forming a photoresist pattern between the anti-reflection coating patterns using a photoresist composition comprising a silicon-containing polymer; and patterning the underlying layer using the photoresist patterns as an etching mask.

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