Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Post imaging treatment with particles
Patent
1994-08-23
1997-12-30
Chu, John S.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Post imaging treatment with particles
430316, 430317, 430322, 1566251, G03F 736
Patent
active
057028672
ABSTRACT:
A method for forming fine pattern in a semiconductor device. It comprises the steps of: providing an objective material layer to be patterned covering a photosensitive film atop a semiconductor substrate; selectively exposing the surface of the photosensitive film, to determine a region to be patterned, in the surface of the photosensitive film; diffusing silicon into the surface of the photosensitive film by use of hexamethyl disilazane (HMDS) or tetramethyl disilazane (TMDS), to form a uniformly thin, silylated photosensitive material film at an unexposed surface of the photosensitive film and a thick, silylated photosensitive material film having a shape of convex lens at the exposed surface of the photosensitive film; etching the silylated photosensitive material layer and the photosensitive film with plasma containing NF.sub.3 /O.sub.2, in such a predetermined thickness as to remove the edge of the silylated photosensitive material having a shape of convex lens, to form a silylated photosensitive material pattern which finely determines the region to be patterned; and subjecting the photosensitive film exposed by the silylated photosensitive material pattern to anisotropic etch with oxygen-based plasma, to selectively expose the objective material layer to be patterned. Keeping the CD of the photosensitive film pattern constant, it can provide a clean and smooth surface.
REFERENCES:
patent: 5322765 (1994-06-01), Clecak et al.
patent: 5498514 (1996-03-01), Nakao et al.
Chu John S.
Hyundai Electronics Industries Co,. Ltd.
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